Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.
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Abstract | :
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s. |
Year of Publication | :
2005
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Journal | :
Journal of the American Chemical Society
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Volume | :
127
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Issue | :
14
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Number of Pages | :
4986-7
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Date Published | :
2005
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ISSN Number | :
0002-7863
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URL | :
https://doi.org/10.1021/ja042353u
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DOI | :
10.1021/ja042353u
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Short Title | :
J Am Chem Soc
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